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III-N materials development

MORGaN will directly explore the new In_xAl_1-xN/GaN heterostructure developed in the UltraGaN project. This allows a lower intrinsic mechanical stress minimising materials degradation mechanisms. The "nano-columns" technique developed at the University of Bath will be used to grow low defect density GaN film.

Using these technologies, MORGaN has the following objectives:

• Development of polycrystalline diamond/silicon sandwich hybrid substrates

• Development of innovative compliant heterostructures for growing low defect density GaN film, including AlGaN alloys

• Growth optimisation of InAlN/GaN heterostructures for electronic and sensing applications under extreme conditions.

MORGaN is supported by the European Commission under FP7