PUBLIC SITE
Members
Project outputs
MORGaN finished on 31-Oct-2011.
The consortium would welcome any feedback or comments, or suggestions for
further collaborative research.
Please contact Sylvain Delage
or Bruce Napier.
MORGaN
summary brochure
Nov-2011
A summary of the key MORGaN advances during the course of the project
MORGaN flyer
An A4 flyer describing the project objectives
MORGaN
presentation
A broad overview of the project in presentation format
MORGaN newsletters
Newsletter
#6 Nov-11
Newsletter
#5 Jul-11
Newsletter
#4 Jan-11
Newsletter
#3 Jul-10
Newsletter
#2 Jan-10
Newsletter #1 Jun-09
MORGaN videos
Five short videos from MORGaN experts on the key themes of the
project
III-N materials
Temperature dependent properties of GaN
A comprehensive literature study of measured properties of GaN
compiled by Michael Edwards at the University of Bath
ITE
measurement capabilities
Overview of techniques available at Institute of Electron
Technology (Warsaw) for measurement of wafer bow and thermal stress
MORGaN publications
In all there were over 120 conference papers and articles and almost
30 papers in refereed journals resulting from the MORGaN work. For a complete
list, please contact Bruce Napier
or Sylvain Delage.
The following list gives a few relevant papers and presentations from the MORGaN consortium:
Diamond overgrown InAlN/GaN HEMT
M. Alomari, M. Dipalo, S. Rossi, M.-A. Diforte-Poisson, S. Delage,
J.-F. Carlin, N. Grandjean, C. Gaquiere, L. Toth, B. Pecz and E. Kohn
Diamond and Related Materials 20, 4, 604 (Apr-11).
Testing the Temperature Limits of GaN-Based
HEMT
D. Maier, M. Alomari, N. Grandjean, J.-F. Carlin, M.-A. Diforte-Poisson, C. Dua,
A. Chuvilin, D. Troadec, C. Gaquière, U. Kaiser, S. Delage, E. Kohn
IEEE Transactions on Device and Materials Reliability 10, 4, 427
(Dec-10).
Modelling Wafer Bow
in Silicon–polycrystalline CVD Diamond Substrates for GaN-based Devices
M.J. Edwards, C.R. Bowen, D.W.E. Allsopp and A.C.E. Dent
Journal of Physics D: Applied Physics 43, 38, 385502 (Sep-10).
Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high
electron mobility transistors
Applied Physics Letters 96, 26, 263515 (Jul-10)
C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Pécz,
J.-F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, and J. Kuzmik.
AlGaN/GaN HEMT on (111) single
crystalline diamond
M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, C. Gaquiere, E. Kohn
Electronics Letters 46, 4, 299 (Feb-10).
Thermal oxidation of lattice matched
InAlN/GaN heterostructures
Physica Status Solidi C 7, 1 13 (Jan-10)
M. Alomari, A. Chuvilin, L. Toth, B. Pecz, J.-F. Carlin, N. Grandjean, C.
Gaquière, M.-A. di Forte-Poisson, S. Delage and E. Kohn
Analysis of degradation mechanisms in
lattice-matched InAlN/GaN high-electron-mobility transistors
J. Kuzmik, G. Pozzovivo, C. Ostermaier, G. Strasser, D. Pogany,
E. Gornik, J.-F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean
Journal of Applied Physics 106, 12, 124503 (Dec-09)
InAlN/GaN MOSHEMT With Self-Aligned
Thermally Generated Oxide Recess
M. Alomari, F. Medjdoub, J.-F. Carlin, E. Feltin, N.
Grandjean, A. Chuvilin, U. Kaiser, C. Gaquiere, E. Kohn
IEEE Electron Device Letters 30, 11, 1131 (Nov-09).
Au free ohmic contacts for
high temperature InAlN/GaN HEMT’s
M Alomari, D Maier, J-F
Carlin, N Grandjean, M-A Diforte-Poisson, S Delage, E Kohn
216th ECS meeting, Vienna, Austria (Oct-09).
Above
500°C Operation of InAlN/GaN HEMTs
D Maier, M Alomari, C Dua, N Grandjean, J-F Carlin, A Chuvilin, S
Delage, E Kohn
Device Research Conference 2009 (DRC2009); USA (Jun-09).
Thick Nano-Crystalline Diamond Overgrowth on InAlN/GaN Devices For
Thermal Management
M Dipalo, M Alomari, J-F Carlin, N Grandjean, M-A
Diforte-Poisson, S Delage, E
Kohn
Device Research Conference 2009 (DRC2009); USA (Jun-09).
Analytical dual gate FET model to identify surface charge
instabilities in the gate drain drift region
P Herfurth, D Kueck, M Alomari,
E Kohn
Workshop on Compound Semiconductor Devices &
Integrated Circuits 2009 (WOCSDICE 2009);
Malaga, Spain; 17-20 (May-09).
High temperature operation for AlGaN/GaN HEMTs
D Maier, N Sarazin, C Dua, E Morvan, S Delage, E Kohn
Workshop on Compound Semiconductor Devices &
Integrated Circuits 2009 (WOCSDICE 2009);
Malaga, Spain; 17-20 (May-09).
Modelling
silicon/ polycrystalline CVD diamond composite substrates for use with GaN-based
devices
M Edwards, C Bowen, D Allsopp
Presented at Dielectrics 2009; Reading University; 15-17 Apr-09.
Diamond overgrowth on InAlN/GaN
heterostructures
M Dipalo, M Alomari, S Delage, E Kohn
Workshop on Compound
Semiconductor Materials and Devices (WOCSEMMAD); USA (Feb-09).
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