|

PUBLIC SITE
Members







| |
| MORGaN Consortium 1
Alcatel-Thales III-V Lab |
 |
Contact
Dr. Sylvain Delage
Location Marcoussis & Palaiseau, France
Overview
ATL is one of the leading European industrial laboratories on GaN material and
devices, including circuit design and reliability. In particular ATL is the
centre of excellence of its mother companies Alcatel-Lucent and Thales on III-V
microelectronics and directly connected to the market needs in the field of
telecommunications and radars.
Main research topics and capabilities
-
GaN material growth,
-
GaN microwave
components (high power, high efficiency, wide band)
-
High brightness / wall-plug efficiency
semiconductor lasers
-
Quantum cascade semiconductor lasers
-
High resolution infrared imaging sensors
-
Optical sources and detectors 10-40+Gbps
(analogue and digital).
Key facilities
-
4000m2 clean rooms
-
Advanced
material synthesis (MOCVD, MBE)
-
Advanced
device processing (RIE, ICP, CAIBE, IBE)
-
Measurement,
modelling & design equipment.
MORGaN tasks
-
Management and coordination
-
MOCVD growth of InAlN material on SiC
and diamond-on-silicon substrates
-
Degradation mechanisms assessment and
study
-
Physical transport and thermal modelling
-
Demonstration of microwave power devices
-
Monitoring of innovation.
|