PUBLIC SITE
Members
Technology links
Links to related websites relevant to MORGaN technology.
MORGaN finished on 31-Oct-2011.
The project results are summarised in the Final MORGaN Brochure (Nov-2011)
The consortium would welcome any feedback or comments, or suggestions for
further collaborative research.
Please contact Sylvain Delage
or Bruce Napier.
GaN HEMTs
GaN power HEMTs An outline of the reasons GaN is such an interesting material for microwave devices
GaN high power electronics Access to text of published papers papers on GaN-based HEMTs
GaN HEMT application notes Specific application notes for designers on the optimal application of GaN substrates (from Nitronex Corp. USA)
MORGaN partners' technical website areas
University of Ulm Institute of Electron Devices & Circuits Technology homepage; applications of novel electronic and electromechanical devices fabricated from large-bandgap semiconductors, with an emphasis on diamond
STU in Bratislava Faculty of Electrical Engineering and Information Technology homepage
IEMN Microwave Power Devices Research activities
Supermaterials research at Element Six; further information on supermaterials including synthetic diamond: properties, manufacture and case studies
General semiconductor technology links
Semiconductors information Wide-ranging informative site with data and links relating to semiconductors, including III-V materials
Semiconductor data Extensive referenced technical data on a number of semiconductor materials including III-V materials from the Russian Ioffe Institute
GaN materials development Workers at Radboud University (The Netherlands) are also researching low defect GaN and diamond substrates
Organisations working in MORGaN-related areas
Diamond Microwave Devices A UK company developing novel diamond semiconductor materials and processing technology with the aim of creating the next generation of high-power, high-frequency semiconductor devices.
Ceimig Ltd. A UK supplier of thin film and nano-scale catalysts and sensors.
Public domain articles
Reducing GaN HEMT degradation with InAlN barrier
Semiconductor Today 08-Jan-2010
Article on MORGaN technology in describing some of the work by MORGaN partners
TU Vienna, IEE (Slovak Academy of Sciences) and EPFL.
Europe turns to AlInN to push the limits of transistor and sensor performance
Compound Semiconductor Dec-09
A detailed article on MORGaN was printed in the December 2009 issue of the
magazine (www.compoundsemiconductor.net).
Fujitsu develops GaN HEMT for use in power supplies
Semiconductor Today Jun-09
Fujitsu Labs (Japan) report development of a new structure for GaN HEMTs
that is claimed to be able to minimise power loss in power supplies.
Advanced substrate demand to increase for gallium-nitride devices
Laser Focus World May-09
Increasing demand for blue-violet laser diodes, UV LEDs, and other devices will
provide significant growth of advanced substrates such as gallium nitride and
aluminum nitride.
Light-enhanced wet etch eats into GaN
Semiconductor Today May-09
Researchers at the University of Crete and FORTH/IESL are developing wet
etch techniques for use with nitride-based semiconductors
Heterostructuring for high speed, power and light
Semiconductor Today Mar/Apr-09
Report on heterostructure materials (including III-nitride) for power, light
and high speed applications.
Powering up GaN MOSFETs
Semiconductor Today Oct-08
A review of high-power radio/microwave frequency amplifiers based on
high critical field and carrier mobility properties.
Wide Bandgap Semiconductor Roadmap
An important output from the
Widgap project (FP6, completed
2006)
Thermal
considerations for GaN technology
Nitromex public website (GaN Essentials)
This detailed application note describes the thermal considerations of GaN-on-Si
technology from a component and device mounting perspective.
Electronics
and electronic materials for harsh environments – a mission to the USA
A report from the UK Department for Trade and Industry (Oct 2003) covering
semiconductors, packaging and reliability for harsh environment applications.
"Breakthrough gives diamond electronics sparkle"
New Scientist 05-Sep-02
Diamond substrates as a future alternative to silicon
